| PRODUCT NAME |
MFSFET: Fabrication & Simulation
|
| ABSTRACT |
Metal-Ferroelectric-Semiconductor device is good candidate for memory device and for fuctional neuron device. Barium Strontium Titanate (BST) film is used as a gate dielectric materials. This project weere used sol gel method to prepare BST solution. Several parameters was controlled such as annealing temparature, dopant concentration and thickness of BST.
|
| FILING COUNTRY |
Malaysia
|
| REG. NUMBER |
|
| INTELLECTUAL STATUS |
Novel
|
| FILE DATE |
|
| IP TYPE |
Patent
|
| YEAR APPLY |
2011
|
| DEPARTMENT |
PUSAT PENGAJIAN KEJURUTERAAN MIKROELEKTRONIK
|
| STAF NO / MATRIC NO |
NURJULIANA BINTI JUHARI, 801014-05-5222, 0100602
|
| OWNER NAME |
UniMAP
|
| EQUITY PERCENTAGE |
|
| NOTEL HP |
123099873
|
