| PRODUCT NAME |
GSM X1 Smart Home Automation System
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| ABSTRACT |
Fully-depletion operation is mandatory requirement for ultra-scaled devices (i.e. < 45 nm technology) which only can be achieved either multi-gate (i.e. FinFET) or thin body Silicon-on-Insulator (SOI). Thin body SOI offers another interesting feature compared to any other technologies i.e. back-gate biasing. In this invention, we utilize asymmetrical contact from the top, which provide improved performance and better controlled of short-channel effects in thin body and thin buried oxide of SOI MOSFETs.
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| FILING COUNTRY |
Malaysia
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| REG. NUMBER |
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| INTELLECTUAL STATUS |
Novel
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| FILE DATE |
|
| IP TYPE |
Patent
|
| YEAR APPLY |
2014
|
| DEPARTMENT |
PUSAT PENGAJIAN KEJURUTERAAN BAHAN
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| STAF NO / MATRIC NO |
MOHD KHAIRULFADZLY BIN ABU BAKAR, 820716-02-5101, 0100823
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| OWNER NAME |
UNIMAP
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| EQUITY PERCENTAGE |
|
| NOTEL HP |
175903868
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