
| PRODUCT NAME | Novel High Breakdown Ingaas/Inalas Phemt Device For High Power - Low Noise Applications |
| FILING COUNTRY | Malaysia |
| REG. NUMBER | |
| INTELLECTUAL STATUS | Novel |
| FILE DATE | |
| IP TYPE | Patent |
| YEAR APPLY | 2014 |
| DEPARTMENT | PUSAT PENGAJIAN KEJURUTERAAN MIKROELEKTRONIK |