PRODUCT NAME	A Method of Producing Nanowires & Product Denies Thereof
ABSTRACT	A method of producing nanowire comprises the steps of growing a first layer of silicon oxide on top a p-type silicon wafer through first thermal oxidation ; coating a layer of ma-N2403 resist on top of the silicon oxide to the wafer; soft baking the coated wafer to remove the resist residual followed by cooling;patterning the coated wafer to electron beam lithography under a mask; developin a resist film from the exposed coated wafer using ma-D532; hard-baking the developed resist film; anistropic etching the resist film using plasma under pressure of 4.5 to 6 Pa for 40 to 50 seconds; and stripping the resist using acetone to acquire silicon oxide nanowires on the silicon wafer
FILING COUNTRY	Malaysia
REG. NUMBER	PI 20091646
INTELLECTUAL STATUS	Patent Pending / Filing - Modified Subtantive Examination
FILE DATE	23/4/2009
IP TYPE	Patent
YEAR APPLY	2008
DEPARTMENT	INSTITUT KEJURUTERAAN NANO ELEKTRONIK