| PRODUCT NAME |
A Method To Fabricate A Nanogap In Between Electronics
|
| ABSTRACT |
A method of fabricating nanogap in between electrodes on a patterned polysilicon substrate comprising the step of oxiding the patterned polysilicon substrate having a pair of electrodes spaced apart by a gap at a temperature ranging from 900oC to 1100oC for 100 minutes to 180 minutes, wherein the gap is reduced to nanosize upon the growing of the oxidized electrodes.
|
| FILING COUNTRY |
Malaysia
|
| REG. NUMBER |
MY-163140-A & PI 2011003126
|
| INTELLECTUAL STATUS |
Patent Granted
|
| FILE DATE |
15/8/2017
|
| IP TYPE |
Patent
|
| YEAR APPLY |
2011
|
| DEPARTMENT |
INSTITUT KEJURUTERAAN NANO ELEKTRONIK
|
