| PRODUCT NAME |
Enhanced DSSC Utilizing Indium Doped Photoanode
|
| ABSTRACT |
Promising a lower cost DSSC. Higher photogenerated electron transport rate. High excitonic binding energy (60 meV).
|
| FILING COUNTRY |
Malaysia
|
| REG. NUMBER |
|
| INTELLECTUAL STATUS |
Patent Novelty Search
|
| FILE DATE |
15/5/2015
|
| IP TYPE |
Patent
|
| YEAR APPLY |
2015
|
| DEPARTMENT |
PUSAT PENGAJIAN KEJURUTERAAN MIKROELEKTRONIK
|