PRODUCT NAME |
MFSFET: Fabrication & Simulation
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ABSTRACT |
Metal-Ferroelectric-Semiconductor device is good candidate for memory device and for fuctional neuron device. Barium Strontium Titanate (BST) film is used as a gate dielectric materials. This project weere used sol gel method to prepare BST solution. Several parameters was controlled such as annealing temparature, dopant concentration and thickness of BST.
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FILING COUNTRY |
Malaysia
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REG. NUMBER |
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INTELLECTUAL STATUS |
Novel
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FILE DATE |
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IP TYPE |
Patent
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YEAR APPLY |
2011
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DEPARTMENT |
PUSAT PENGAJIAN KEJURUTERAAN MIKROELEKTRONIK
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STAF NO / MATRIC NO |
NUR SYAKIMAH BT ISMAIL, 811005-09-5010, 0100946
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OWNER NAME |
UniMAP
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EQUITY PERCENTAGE |
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NOTEL HP |
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