| ABSTRACT |
This study describes a dual band LNA CMOS developed for a Wireless Local Area Network (WLAN) application using CMOS 0.13 μm Silterra technology. One of the most difficult aspects of creating dual band LNA is striking a balance between gain and noise figure over both frequency bands. Consequently, the suggested design integrates forward body bias approach with cascode topology and source degenerate inductor to optimize the result achieved. The simulation results show a total power consumption of 5.8 mW at 0.6 V supply voltage, with a gain of 16.1 dB at 2.4 GHz and 14.9 dB at 5.2 GHz. Furthermore, at 2.4 GHz and 5.2 GHz, input return loss was -23.7 dB and -14.9 dB, with noise values of 2.7 dBm and 1.7 dBm, respectively. Overall, this study helps to create dual band LNA designs for WLAN applications.
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