| PRODUCT NAME |
A LEAD-FREE VACANCY-ORDERED PEROVSKITE SOLAR CELL ARCHITECTURE WITH ENHANCED INTERFACIAL CHARGE EXTRACTION
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| ABSTRACT |
The present invention provides a high-performance cell configuration characterized by the sequential stack: FTO/GO/(MA0.5Cs0.5)2SnI6/PEDOT:PSS/Pt. A primary objective of this invention is to provide an architecture where a Graphene Oxide (GO) layer reduces the surface roughness of the conductive substrate (from 12.5 nm to a functional level) to facilitate the growth of a compact VOP morphology. Another objective is to utilize a poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) hole transport layer in direct contact with the VOP absorber to ensure low-resistance hole extraction, coupled with a Platinum (Pt) counter electrode deposited via slot-coating to provide superior catalytic activity and electrical contact.
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| FILING COUNTRY |
Malaysia
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| REG. NUMBER |
PI2026001203
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| INTELLECTUAL STATUS |
Patent Filing
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| FILE DATE |
2/3/2026
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| IP TYPE |
Patent
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| YEAR APPLY |
2026
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| DEPARTMENT |
105
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| STAF NO / MATRIC NO |
DEWI SURIYANI BINTI CHE HALIN, 810303-02-5286, 0101223
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| OWNER NAME |
UNIVERSITI MALAYSIA PERLIS
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| EQUITY PERCENTAGE |
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| NOTEL HP |
125881153
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