PRODUCT NAME |
A Method Of Producing Silicon Nanowire
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ABSTRACT |
A method of producing a silicon-based nanowire comprising the steps of patterning a resist layer deposited on a silicon-on-insulator; wet-etching the SOInwith the resist layer using an anisotropic solution to form a riffle structure; removing the resist layer; thermally oxidizing the SOI; and repeating steps to trim down the riffle structure to nanoscale.
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FILING COUNTRY |
Malaysia
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REG. NUMBER |
PI 2014703284
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INTELLECTUAL STATUS |
Patent Filing
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FILE DATE |
5/11/2014
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IP TYPE |
Patent
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YEAR APPLY |
2014
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DEPARTMENT |
NANO
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STAF NO / MATRIC NO |
UDA BIN HASHIM, 640330-02-5389, 0402428
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OWNER NAME |
UNIMAP
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EQUITY PERCENTAGE |
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NOTEL HP |
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