• PERSON INVOLVED
    PRODUCT NAME Asymmetrical Double Gate Ultra-Thin SOI MOSFETs
    FILING COUNTRY Malaysia
    REG. NUMBER PI 2015700349
    INTELLECTUAL STATUS Patent Filing
    FILE DATE 5/2/2015
    IP TYPE Patent
    YEAR APPLY 2014
    DEPARTMENT NANO
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    INTELLECTUAL PPROPERTY
    PERSON TYPE
    STAF NO / MATRIC NO
    OWNER NAME
    EQUITY PERCENTAGE
    NOTEL HP
    Asymmetrical Double Gate Ultra-Thin SOI MOSFETs Staf MOHD KHAIRUDDIN BIN MD ARSHAD, 750214-02-6509, 0100311 UNIMAP   195541402
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