| ABSTRACT |
With the increasing demand for high-frequency applications due to congestion in lower frequency bands, the need for high-performance diode detectors has become critical. Achieving fast and efficient high-frequency response requires diodes with strong rectification capability and sharp nonlinearity. These electrical characteristics, particularly the IżV behavior of the device, strongly influence key performance metrics such as the curvature coefficient and current responsivity. Derived from the IżV curve shape, these metrics reflect the deviceżs nonlinear behavior. This study investigates how geometrical modifications influence ballistic transport and electrical performance in silicon-based self-switching devices (SSDs). A triangular potential barrier is introduced within the channel to promote ballistic-like electron transport, especially when the channel dimensions are comparable to or smaller than the mean free path (MFP) of charge carriers. Device structures are designed using Silvaco Devedit 3D and simulated in ATLAS. IżV characteristics, hole velocity, electric field and hole velocity are extracted from Tonyplot. Among the simulated structures, both the fully triangular and the integrated trench designs are more significantly exhibited substantially higher hole velocities and localized electric fields. Furthermore, the SSD with integrated planar and triangular trenches achieved a significantly enhanced forward current which is pointing toward stronger ballistic-like behavior. This geometry is considered the most promising within the scope of the simulations, with its narrow trench width and short channel length suggesting the possibility of quasi-ballistic or ballistic-like transport. Results further indicate that both the size and shape of the triangular barrier critically affect electrical characteristics, showing their importance for future SSD optimization.
|
