| PRODUCT NAME |
A Method For Tunnel Barriers And Shrinking A Quantum Dot
|
| ABSTRACT |
A method for expanding tunnel barriers sandwiching a quatum dot on a patterned wafer comprising the step of subjecting the patterned wafer to oxidation at a temperature ranging from 700oC to 1200oC for a period ranging from 2 seconds to 20 seconds, wherein the quantum dot shrinks upon the expansion of the tunnel barriers during oxidation. The quantum dot is shrunk and the tunnel barriers are expanded after an oxidation process carried out in a Rapid Thermal Processing(RTP) system.
|
| FILING COUNTRY |
Malaysia
|
| REG. NUMBER |
PI 2011003041
|
| INTELLECTUAL STATUS |
Patent Pending / Filing - Modified Subtantive Examination
|
| FILE DATE |
24/6/2011
|
| IP TYPE |
Patent
|
| YEAR APPLY |
2011
|
| DEPARTMENT |
INSTITUT KEJURUTERAAN NANO ELEKTRONIK
|
