| ABSTRACT |
Novel Highly sensitive 20nm SiNWs transducers have been fabricated by means of simple in-house fabrication method for the first. A low cost, simple top-down approach has been successfully used for the fabrication of very sensitive SiNWs. The fabrication was done without using costly DRIE or RIE. The process started by patterning wire marked through photo resist and the marked resist was deeped into BOE 30mins to etch away the oxide present on the poly-silicon surface leaving the photo resest masked portion un etch. Wires of <3um was obtained with 6 buttered thermal re-etch processes. After the resist was stripped, the wire pattern was trimmed to 20nm using dry etching with constant 5% reduction at 1100oC for 40/5 minutes in oxidation/BOE process respectively. Electrical characterization conducted shown an increase in sensitivity with the reduction in size while resistance increases at constants 70V supply which was also verified for the size reduction through surface morphology using FESEM.
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