| ABSTRACT |
Fully-depletion operation is mandatory requirement for ultra-scaled devices (i.e. < 45 nm technology) which only can be achieved either multi-gate (i.e. FinFET) or thin body Silicon-on-Insulator (SOI). Thin body SOI offers another interesting feature compared to any other technologies i.e. back-gate biasing. In this invention, we utilize asymmetrical contact from the top, which provide improved performance and better controlled of short-channel effects in thin body and thin buried oxide of SOI MOSFETs.
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