PRODUCT NAME |
Enhanced DSSC Utilizing Indium Doped Photoanode
|
ABSTRACT |
Promising a lower cost DSSC. Higher photogenerated electron transport rate. High excitonic binding energy (60 meV).
|
FILING COUNTRY |
Malaysia
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REG. NUMBER |
|
INTELLECTUAL STATUS |
Patent Novelty Search
|
FILE DATE |
15/5/2015
|
IP TYPE |
Patent
|
YEAR APPLY |
2015
|
DEPARTMENT |
PUSAT PENGAJIAN KEJURUTERAAN MIKROELEKTRONIK
|