| ABSTRACT |
The carbon nano tube field effect transistor is an electrical device that is applied for agricultural and medical application. The fabrication of CNT FET is done on a 100 mm p-type silicon wafer. First, the wafer is oxidized to form silicon dioxide for insulating purpose. Then, the wafer is then deposited with Titanium (Ti) and Aurum (Au) creating Ti/Au layer on the silicon dioxide layer. The micro patterning using lithography process with microgap mask which has been previously design was transferred on Ti/Au layer. Later, this Ti/Au layer was etched using aqua regia to form the electrode for CNT FET fabrication. The alignment of carbon nano tube using AC and DC method is chosen due to its simple approach of aligning the CNT to bridge the electrode.
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