PRODUCT NAME MFSFET: Fabrication & Simulation
ABSTRACT Metal-Ferroelectric-Semiconductor device is good candidate for memory device and for fuctional neuron device. Barium Strontium Titanate (BST) film is used as a gate dielectric materials. This project weere used sol gel method to prepare BST solution. Several parameters was controlled such as annealing temparature, dopant concentration and thickness of BST.
FILING COUNTRY Malaysia
REG. NUMBER
INTELLECTUAL STATUS Novel
FILE DATE
IP TYPE Patent
YEAR APPLY 2011
DEPARTMENT PUSAT PENGAJIAN KEJURUTERAAN ALAM SEKITAR
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